Nanoscale Tunnel Field-Effect Transistor Based on a Complex-Oxide Lateral Heterostructure
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Physical Review Applied
سال: 2019
ISSN: 2331-7019
DOI: 10.1103/physrevapplied.11.064026